Chain character of vacancy-type defects in silicon

Silicon Vacancy Defects in Diamond as Single Photon Source

For the applications in quantum information and experiments on the foundations of quantum mechanics a robust narrow-band single photon source is desirable. We report on single photon emission from the Silicon Vacancy (SiV) centers in diamond fabricated by ion implantation. Single SiV centers are photostable and have a spectrum consisting of a sharp zero phonon line (FWHM is about 5 nm) at 738 n...

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Silicon samples of n-type have been implanted at room temperature with 5.6-MeV Si ions to a dose of 2310 cm and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V2) and vacancy-oxygen ~VO! centers were studied in detail using deep-level transient spectroscopy. The decrease of V2 cent...

Vacancy Defects Induced Magnetism in Armchair Graphdiyne Nanoribbon

Spin-polarized electronic and transport properties of Armchair GraphdiyneNanoribbons (A-GDYNR) with single vacancy (SV), two types of configurations fordouble vacancy (DV1, DV2) and multi vacancy (MV) defects are studied by nonequilibriumGreen’s function (NEGF) combined with density functional theory (DFT).The results demonstrate that the A-GDYNR with the SV has the lowe...

4. Vacancy formation in n-type silicon-doped GaAs

Title: Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon

Rights: © 1998 American Physical Society (APS). This is the accepted version of the following article: Puska, M. J. & Pöykkö, S. & Pesola, M. & Nieminen, Risto M. 1998. Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon. Physical Review B. Volume 58, Issue 3. 1318-1325. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.58.1318, which has been publishe...